View TGA4040-15_8126504.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 tga4040 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com key features ? frequency: 17 - 43 ghz ? 25 db nominal gain @ mid-band ? 22 dbm nominal output p1db ? 2x and 3x multiplier function ? 0.15 um 3mi phemt technology ? chip dimensions 1.72 x 0.76 x 0.10 mm (0.068 x 0.030 x 0.004 in) primary applications ? point-to-point radio ? ew ? instrumentation ? frequency multiplier amplifier performance bias conditions: vd = 5 v, idq = 139 ma -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 17 19 21 23 25 27 29 31 33 35 37 39 41 43 frequency (ghz) s-parameters (db) irl orl gain 10 12 14 16 18 20 22 24 26 17 19 21 23 25 27 29 31 33 35 37 39 41 43 frequency (ghz) p1db (dbm) 5v_225ma 5v_172ma 5v_139ma product description the triquint tg4040 is a medium power amplifier and multiplier for a wide band of 17 ? 43ghz applications. the part is designed using triquint?s 0.15um power phemt production process. the tga4040 provides a nominal 25 db small signal gain with 22 dbm output power @ 1 db gain compression. for 2x and 3x multiplier function, tga4040 provides 15 dbm typical of output power @ 9 dbm pin. the part is ideally suited for applications such as point-to-point radio, ew, instrumentation and frequency multipliers. the tga4040 is 100% dc and rf tested on- wafer to ensure performance compliance. the tga4040 has a protective surface passivation layer providing environmental robustness. lead-free & rohs compliant. 17 - 43 ghz mpa / multiplier datasheet subject to change without notice
2 tga4040 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i maximum ratings 1 / symbol parameter value notes vd drain voltage 6 v 2 / vg gate voltage range -2 to 0 v id drain current tbd 2 / 3 / ? ig ? gate current 7 ma 3 / p in input continuous wave power 20 dbm p d power dissipation 1.95 w 2 / 4 / t ch operating channel temperature 200 c 5 / mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / total current for the entire mmic. 4 / when operated at this power dissipation with a base plate temperature of 70 c, the median life is 7.3e3 hours. 5 / junction operating temperature will directly a ffect the device median time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
3 tga4040 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table ii electrical characteristics (ta = 25 0 c nominal) parameter amplifier 2x multiplier 3x multiplier units frequency range 17 - 43 9 - 22 6 - 12 ghz drain voltage, vd1* - - 1 v drain voltage, vd* 5 5 5 v total drain current* 139 120 160 ma gate voltage, vg1* -1.1 v gate voltage, vg* -0.65 -0.65 -0.6 v small signal gain, s21 25 - - db input return loss, s11 12 - - db output return loss, s22 8 - - db output power @ 1db gain compression, p1db 5v @ 139ma 5v @ 225ma 20 22 - - dbm output toi 28 - - dbm output power @ pin = 9dbm - 15 15 dbm gain temperature coefficient -0.04 - - db/ 0 c * see bias plan on page 8 for amplifier and 2x multiplier, page 9 for 3x multiplier
4 tga4040 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii thermal information parameter test conditions t ch (c) jc (c/w) tm (hrs) jc thermal resistance (channel to case) vd = 5 v id = 139 ma pdiss = 0.69 w 116 66.7 6.3e+7 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. median lifetime (tm) vs. channel temperature
5 tga4040 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 frequency (ghz) gain (db) measured amplifier data bias conditions: vd = 5 v, idq = 139 ma -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 frequency (ghz) return loss (db) irl orl
6 tga4040 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 10 12 14 16 18 20 22 24 26 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 frequency (ghz) output power @ 1db gain compression (dbm) 5v_225ma 5v_172ma 5v _ 139ma measured amplifier data bias conditions: vd = 5 v, idq vary
7 tga4040 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 6 8 10 12 14 16 18 20 22 24 26 input frequency(ghz) output power (dbm) pout @ 2x fundamental pout measured 2x multiplier data bias conditions: vd = 5 v, idq = 120ma, vg1 = -1.1v, pin = 9dbm -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 4 5 6 7 8 9 10 11 12 13 14 15 16 frequency (ghz) output power (dbm) pout @ 3x fundamental pout measured 3x multiplier data bias conditions: vd = 5 v, vd 1 = 1v, idq = 160ma, pin = 8dbm
8 tga4040 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. rc rc b b 1 2 3 4 5 6 7 8 9 10 11 12 13 14 0 0 0.086 (0.003) 0.437 (0.017) 1.123 (0.044) 1.635 (0.064) 1.720 (0.068) 0.086 (0.003) 0.230 (0.009) 0.380 (0.015) 0.530 (0.021) 0.673 (0.026) 1.625 (0.064) 1.176 (0.046) 0.522 (0.021) 0.331 (0.013) 0.095 (0.004) 0.530 (0.021) 0.380 (0.015) 0.230 (0.009) 0.086 (0.003) 0.760 (0.030) units: millimeters (inches) thickness: 0.100 (0.004) chip edge to bond pad dimensions are shown to center of bond pad chip size tolerance: +/- 0.051 (0.002) gnd is back side of mmic bond pad #1: bond pad #2, #3, #6, #7, #9, #10, #12, #14: bond pad #4: bond pad #5: bond pad #8: bond pad #11: bond pad #13: (rf in) (gnd) (vd1) (vd) (rf out) (vg) (vg1) 0.100 x 0.150 (0.004 x 0.006) 0.081 x 0.081 (0.003 x 0.003) 0.081 x 0.081 (0.003 x 0.003) 0.081 x 0.081 (0.003 x 0.003) 0.081 x 0.081 (0.003 x 0.003) 0.081 x 0.081 (0.003 x 0.003) 0.100 x 0.150 (0.004 x 0.006)
9 tga4040 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com rf in rf out .01uf vd vg1 vg .01uf .01uf recommended chip assembly diagram amplifier & 2x multiplier gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. amplifier set vd = 5.0v vary (vg + vg1) to achieve id = 139ma 2x multiplier set vd = 5.0v set vg1 = -1.1v vary vg to achieve id = 120ma
10 tga4040 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com rf in .01uf .01uf rf out vd1 vd vg1 vg .01uf .01uf recommended chip assembly diagram 3x multiplier gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. 3x multiplier set vd = 5.0v set vd1 = 1.0v vary (vg + vg1) to achieve(id + id1) = 160ma
11 tga4040 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 0 c (30 seconds max). ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 0 c.

▲Up To Search▲

Price & Availability of TGA4040-15

	To Download TGA4040-15 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .